Three-dimensional Simulation Of Low-pressure Chemical Vapour Deposition
Price
Free (open access)
Transaction
Volume
11
Pages
9
Published
1996
Size
747 kb
Paper DOI
10.2495/ES960451
Copyright
WIT Press
Author(s)
E. Bar, J. Lorenz & H. Ryssel
Abstract
A three-dimensional program for predicting the geometry of layers deposited by low-pressure chemical vapor deposition (LPCVD) has been developed. For the calculation of the growth rate for each surface position, a particle redistribution model is employed which can handle one or two reactive precursors controlling layer growth. The model is implemented using a triangular description of the surface. Simulations for tungsten LPCVD and low-temperature oxide (LTO) deposition are shown. The simulations agree well with experimental data. The simulator is designed as a module of the European universal three-dimensional process simulator PROMPT. 1 Introduction Shrinking device dimensions and increasing integration density of devices in integrated circuits require
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