A Four-phase Moving Boundary Problem In Laser Irradiation Of Amorphous Silicon
Price
Free (open access)
Transaction
Volume
12
Pages
10
Published
1996
Size
928 kb
Paper DOI
10.2495/HT960271
Copyright
WIT Press
Author(s)
R. Cerny & P. Pfrkryl
Abstract
The phase transitions in thin layers of amorphous silicon on the quartz sub- strate caused by pulsed-laser irradiation are studied as a four-phase moving boundary problem with three moving boundaries using a nonequilibrium thermal model. Three phases, namely the liquid silicon (1-Si), the polycrys- talline silicon (pc-Si), and amorphous silicon (a-Si) are treated explicitly, and the fourth phase, Si vapor, is included in the boundary conditions for 1- Si. The numerical solution is performed using the Landau transformations, Galerkin finite element method and successive approximation approach with underrelaxation. In a practical applic
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