The Improvement In A GaAs Power Sensor Microsystem Technology And Simulation
Price
Free (open access)
Transaction
Volume
34
Pages
9
Published
1997
Size
869 kb
Paper DOI
10.2495/MIC970051
Copyright
WIT Press
Author(s)
T. Lalinsky, E. Burian, Z. Mozolova, S. Hascik, J. Kuzmik, P. Bohacek & Z. Hatzopoulos
Abstract
The technology of a GaAs micromachined power sensor microsystem based on a 2 jam thick cantilevers is demonstrated. The key sensor power-temperature transfer characteristics for se- lected ambient gaseous environments are evaluated. An excellent linearity in the transfer characteristics is achieved for the air and argon environments with the thermal resistance values as high as 13000 K/W and 16000 K/W, respectively. The temperature spatial dis- tribution and transients in the sensor cantilever are simulated by solving the steady state and time dependent two-dimensional heat flow equation
Keywords
